2,4,6,8 - tétraméthylcyclotetrasiloxane,;, >=99,5%, > = 99,999 % base de métaux traces

Code: 512990-25ml D2-231

Non disponible en dehors du Royaume-Uni et de l'Irlande

Features and Benefits

Precursor for gate dielectrics in thin-film transistors (TFT), and is a component of photochemically formed SiOX monolayers on TiO.


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Votre prix
$467.13 25ML

Non disponible en dehors du Royaume-Uni et de l'Irlande

Features and Benefits

Precursor for gate dielectrics in thin-film transistors (TFT), and is a component of photochemically formed SiOX monolayers on TiO.

General description

Atomic number of base material: 14 Silicon

Packaging

25, 100 mL in glass bottle

assay≥99.999% trace metals basis, ≥98.5%
bp134 °C (lit.)
density0.986 g/mL at 25 °C (lit.)
formliquid
InChI keyBQYPERTZJDZBIR-UHFFFAOYSA-N
InChI1S/C4H16O4Si4/c1-9-5-10(2)7-12(4)8-11(3)6-9/h9-12H,1-4H3
mp−69 °C (lit.)
Quality Level100
refractive indexn20/D 1.387 (lit.)
SMILES stringC[SiH]1O[SiH](C)O[SiH](C)O[SiH](C)O1
storage temp.2-8°C
Cas Number2370-88-9
Hazard Class3
Un Number1993
Pack Group3
Ce produit répond aux critères suivants pour être admissible aux récompenses suivantes :



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